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Oxygen Vacancy Dynamics at Room Temperature in Oxide Heterostructures Shanyong Bao, Jing Ma, Teng Yang, Mingfeng Chen, Jiahui Chen, Shengli Pang, Ce-Wen Nan, and Chonglin Chen ACS Appl. Mater. Interfaces, Just Accepted Manuscript • DOI: 10.1021/acsami.7b17783 • Publication Date (Web): 15 Jan 2018 Downloaded from http://pubs.acs.org on January 15, 2018
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ACS Applied Materials & Interfaces
Oxygen Vacancy Dynamics at Room Temperature in Oxide Heterostructures Shanyong Bao1a), Jing Ma1a), Teng Yang1, Mingfeng Chen1, Jiahui Chen1, Shengli Pang2, Ce-Wen Nan1*and Chonglin Chen1,3*
1
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering,
Tsinghua University, Beijing 100084, P. R. China 2
Institute for Advanced Materials, Jiangsu University, Zhenjiang 212013, P.R. China
3
Department of Physics and Astronomy, University of Texas at San Antonio, TX78249, USA
Abstract: Oxygen vacancy dynamic behavior at room temperature in complex oxides was carefully explored by using a combining approach of ion liquid gating technique and resistance measurements. Heterostructures of PrBaCo2O5+δ/Gd2O3-doped CeO2 epitaxial thin films were fabricated on (001) Y2O3-stabilized ZrO2 single crystal substrates for systematically investigating the oxygen redox dynamics. The oxygen dynamic changes as response to the gating voltage and duration were precisely detected by in-situ resistance measurements. A reversible and non-volatile resistive switching dynamics was detected at room temperature under the gating voltage>13.5 V with pulse duration> 1 second.
KEYWORDS: epitaxial thin films, PrBaCo2O5+δ, ion liquid gating, oxygen vacancy dynamic, interfacial electrochemical reactions, electrostatic effect
a) Bao and Ma contributed equally to this work. * e-mail:
[email protected]* e-mail:
[email protected] 1
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1.Introduction Oxygen vacancy exchange dynamics at complex oxide surfaces and interfaces is a key factor in governing materials multi-functionalities.1,2 It is highly related with oxygen catalytic reaction on the material surfaces including oxygen oxidation and reduction reactions. However, these reaction processes are difficult to occur at room temperature due to the high catalytic potentials between the molecular and ionic phases. It generally requires a long time (a few hours) of annealing in high oxygen gas pressure at high temperatures (>300°C), 3 , 4 , 5 since thermal energy is a key factor in governing phase transformations. To the contrary, the field-tuned electrochemical technique can significantly alter the phase transition energy and has the potential to become a convenient approach for controlling the redox processes in standard condition, even though most of the controlling were still conducted at an elevated temperature.6,7 Very recently, the room temperature electric-field controlled oxygen exchange behavior using ionic liquid gating was greatly developed.8,9,10,11 Various anomalous physical phenomena, e.g., electric-field driven magnetism, 12 metal-to-insulator transition, 13 modification of physical transport properties 14 and p-n junction control, 15 etc. were achieved by the external gating electric-fields. However, such ionic liquid gating still requires a relatively long duration time (e.g. 3 minutes for SrCoO3-δ film of 20 nm thickness11). Researchers have found that the gating voltage and electrode area would influence the duration time, but they are not the intrinsic factors. In our opinion, the material system should be the critical factor. As previous works 16 , 17 demonstrated that the double/layer perovskite materials exhibit much higher oxygen redox activities than the simple ABO3 structural material, so such kind of material could be a good option to reduce the gating time, which
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is beneficial to the devices applications. The A-site ordered double perovskite AA'Co2O5+δ(0
