Patterning Disorder in Monolayer Resists for the Fabrication of Sub

8356

J. Am. Chem. Soc. 1999, 121, 8356-8365

Patterning Disorder in Monolayer Resists for the Fabrication of Sub-100-nm Structures in Silver, Gold, Silicon, and Aluminum Andrew J. Black,† Kateri E. Paul,† Joanna Aizenberg,*,‡ and George M. Whitesides*,† Contribution from the Department of Chemistry and Chemical Biology, HarVard UniVersity, 12 Oxford Street, Cambridge, Massachusetts 02138, and Bell Laboratories, Lucent Technologies, 600 Mountain AVe, Murray Hill, New Jersey 07974 ReceiVed March 17, 1999

Abstract: This paper describes the development of a new methodology, “topographically directed etching” or TODE, that relies on patterned regions of disorder in SAMs to generate features specifically at the edges of topographically patterned metal films. The features that are produced have lateral dimensions of