Chem.Rev.1989, 8 9 , 1273-1289
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Polymer Materials for Microlithography E. REICHMANIS’ and L. F. THOMPSON* AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Received January 20, 1989 (Revised Manuscript Received March 22, 1989)
Contents
ance of the different resist systems are reviewed.
Introduction Short-Wavelength Photolithography X-ray Lithography Electron Beam Lithography Scanning Ion Beam Lithography Summary Single-Level Resist Chemistry Negative Resists Positive Resists Chain Scission Resists Solution Inhibition Resists Nonconventional Resist Chemistry Multilevel Resist Chemistry Multilevel Resist Processes Employing Reactive Ion Etching Pattern-Transfer Techniques Gas-Phase Functionalization Conclusion
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Overview
Astonishing progress has been made in very large scale integrated (VLSI) electronic devices in the past decade. These advances are placing increasing demands on microlithography, the technology used to generate the high-resolution circuit elements characteristic of today’s integrated circuits. In 1976, state-of-the-art devices contained a few thousand transistors with minimum features of 5-6 pm. In comparison, today’s devices contain over 1million transistors and minimum features of 0.9 pm. Within the next 10-15 years, some new form of lithography will be required with a capability of routinely producing features of
