Research Article www.acsami.org
Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility Ken Everaerts,† Li Zeng,# Jonathan W. Hennek,† Diana I. Camacho,† Deep Jariwala,‡ Michael J. Bedzyk,‡,⊥,# Mark C. Hersam,*,‡,†,§ and Tobin J. Marks*,†,‡ †
Department of Chemistry, ‡Department of Materials Science and Engineering, §Department of Medicine, ⊥Department of Physics and Astronomy, and #Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States S Supporting Information *
ABSTRACT: Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (
