Progress in Semiconductors. Volume 3. - Journal of the American

Progress in Semiconductors. Volume 3. D. L. Dexter. J. Am. Chem. Soc. , 1959, 81 (8), pp 2029–2029. DOI: 10.1021/ja01517a069. Publication Date: Apri...
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ilpril 20, 1950

Boos REVIEWS

2029

The \-oluiiic begins with a paper (15 pages) by Paqunt n n autoxidation of fatty substances, through which t h e rettdcr becomes acquainted with pertinent aspects of peroxide chemistry. Thereafter, follow analytical studies on the radintion formation of peroxides in various organic conipciunds of biological interest, including cumene (11.Durup, 9 pages), amino acids and peptides (S. Okada, 4 pages) and nucleic acids and related compounds ( J . .I.1.. Butler, 3 pages and J . IVeiss, 3 pages). Then papers on t h e presumptive indication of peroxide intermediates, in different biological r.idi.ition reactions including killing of mice ( J . S t . I,. Pltilpiit, et ai.,8 pages), inxtivCition i i f tr:iiisfurming principle i n pneumococci (I- and Sons, Paper and printing are good. There is an Inc., 44@ Fourth Avenue, S e w I'ork 16, S . Y. 1958. vii , but one misses a subject index. 210 pp. 16.5 X 23.5 cm. Price, $5.50. CHEMISTRY DIVISIOS This is the third of a n annual series of volumes reviewing ARCOSSE SATIOSAL LAWRATORY iru(;o IIWX various topics in the field of semiconductors. This volume LEMOST,ILLISOIS contains t h e following seven articles: The Magnetoresistivity of Germanium mid Silicon, hI.Glicksirian; The Chemical Purification of Germaniurn and Silicon, J . bI. IVilson; Electronic Conductivity of Silver Halide Crystals. J . IV. ?rlitclicll; Silicon Junction Diodes, D. E . 3l:asiin a n d D . F. Taylor; Lifcstirne of Excess Carriers in Serniccinductors, A . M a n y anti K . D r a y ; Scattering ;ind Drift Llobility o f Carriers i n Germ:iniuiii, h l . S.Siidli'i; Electronic Processes iii C:idrniuni Sulphide, J . Lainbe :ind C. C . Klick. The articles :ire about ivlitit \\-e lixvc come t i i expect frliiti the first t w o viilurrics, being alioiit :3r p:igcs iii Iengtli, iritli cunteiits well described b!. tlieir t i t _. l e > . 13:iving resid tlie bo[ik, I find little t o coiniiieiit 1111. I lie ;irticles ;ire gciier:ill>. \vel1 ivritten, \ \ i t 1 1 c,ircfiil wlcction ( i f ni,itcri:il. The t y p e c~iiitiiiui~s t o bcs too s11i:i11,:iiid tlie paper too yell~iiv, for ciiinfiirt:iblc re,tdiiig, m t l , o f coiirsr, i v i t l i nilist ( i f tlie articles writtcii 11et\vecn t i n e : t i i d tivo y e u s ;igii, iii;iiiy recent devel~ipiiiciits;are not includctl. Severtltelcss, tliesc, I);ipers serve R S wiirthwliile guides to the I)rescrit st:itiis of these interesting tupics and in iiioht cka,.cs itidic:itc tlic prohiblc direction !if future progress.

tor>-tools for t h e study of high inagiletic fields or the study o f protective materials for the re-entry phase of rockets. The report of this conference presents authoritative a n d , in m a n y instances, quite detailed discussions of t h e equipment used for priiducing tlie high temperature plasmas or of the types o f i i ~ e ; i ~ ~ r e n that ~ e n tcan be made. It is unfortunate t h a t the rel.tsntion of security restrictions in this general field did tmt come early enough t o allow a much broader discussion o f ivurk with plasmas and possible applications. This restrictiun has left a somewhat unbalanced presentation \\-itli sotne topics discussed in great detail and other topics barel>- iiientioned. For those topics which have been :tdequ:itel!- covered t h e reader will find a quite up t o date and comprehensive treatment. Although this work will be of great value t o those active in the plasma field, it will not be very useful t o the casual reader who wishes to gain an over-all view of the activities in this field. DEP,4RT'MEST O F CHEMISTRY USI\.ERSITTOF CALIFORSIA LEO BREWER BERKELEY, CALIFORSIA

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