Quantum Transport and Field-Induced Insulating States in Bilayer

Graphene-Based Device Enables Active Thermal Camouflage. Researchers have made a thermal camouflage device from graphene that can adjust how much ...
0 downloads 0 Views 62KB Size
ADDITIONS AND CORRECTIONS pubs.acs.org/NanoLett

Quantum Transport and Field-Induced Insulating States in Bilayer Graphene pnp Junctions [Nano Lett. 2010, 10, 4007] Lei Jing, Jairo Velasco, Jr., Philip Kratz, Gang Liu, Wenzhong Bao, Marc Bockrath, and Chun Ning Lau*

Page 4008. The unit of conductance G in Figure 2a should be µS, instead of mS. The other panels in Figure 2 have correct units. We apologize for any inconvenience this error caused to readers. In addition, the authors acknowledge the support by UC Lab Fees program and DARPA/DMEA under agreement number H94003-10-2-1003. Published on Web: 09/30/2010

© 2010 American Chemical Society

4775

DOI: 10.1021/nl103406b | Nano Lett. 2010, 10, 4775