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J . Am. Chem. SOC.1992, 1 1 4, 9028-9034
9028
prior to placement in the evaporation chamber. Preparation of Cu/S(CH2),CH3. Chromium (200 A) and copper (2000 A) were evaporated in sequence at 5 A/s onto Si(100) wafers in a cryogenically-pumped chamber (base pressure iz 8 X lo-* Torr; operating pressure = 1 X 10" Torr) using an electron beam; the resulting copper films are polycrystalline but have a predominant crystallographic orientation that is (1 11).I0 After evaporation, the chamber was backfilled and the wafers were with argon (Med-tech; 99.998%,