Silicon-Containing Block Copolymers with 5 nm

Julia D. Cushen,†,z Issei Otsuka,§,z Christopher M. Bates,‡ Sami Halila,§ Se´bastien Fort,§ Cyrille Rochas,§ Jeffrey A. Easley,† Erica L. Rausch,† Anthony Thio,† Redouane Borsali,§,* C. Grant Willson,†,‡,* and Christopher J. Ellison†,*

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Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications †

Department of Chemical Engineering, The University of Texas at Austin, 1 University Station C0400, Austin, Texas 78712, United States, ‡Department of Chemistry, The University of Texas at Austin, 1 University Station, A5300, Austin, Texas 78712, United States, and §Centre de Recherche sur les Macromolécules VégétalesCERMAV, CNRS UPR 5301-ICMG and Joseph Fourier University, BP53, 38041 Grenoble Cedex 9, France. zThese authors contributed equally to this work.

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he current 193 nm optical immersion lithography process has reached resolution limits at approximately 36 nm as described by Rayleigh's equation.1 Alternative patterning technologies must be developed to enable manufacturing of next-generation integrated circuits, flash memory and hard disk drives. Nanoimprint technology is an attractive choice for replicating sub-36 nm features, and has demonstrated successful pattern transfer down to