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2009, 113, 2197–2199 Published on Web 01/20/2009
Stress Release Drives Growth Transition of Quaterrylene Thin Films on SiO2 Surfaces Ryoma Hayakawa,† XueNa Zhang,‡ Helmut Dosch,‡ Nobuya Hiroshiba,† Toyohiro Chikyow,† and Yutaka Wakayama*,† AdVanced Electronic Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan, and Max Planck Institute for Metals Research, Heisenbergstrasse 3, D-70569, Stuttgart, Germany ReceiVed: October 29, 2008; ReVised Manuscript ReceiVed: December 23, 2008
The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (
