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Organic Electronic Devices
High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials Inho Song, Seung-Chul Lee, Xiaobo Shang, Jaeyong Ahn, Hoon-Joo Jung, ChanUk Jeong, Sang-Wook Kim, Woojin Yoon, Hoseop Yun, O-Pil Kwon, and Joon Hak Oh ACS Appl. Mater. Interfaces, Just Accepted Manuscript • Publication Date (Web): 21 Mar 2018 Downloaded from http://pubs.acs.org on March 21, 2018
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ACS Applied Materials & Interfaces
High-Performance Visible-Blind UV Phototransistors Based on nType Naphthalene Diimide Nanomaterials Inho Song,†,§ Seung-Chul Lee,‡,§ Xiaobo Shang,† Jaeyong Ahn,† Hoon-Joo Jung,‡ Chan-Uk Jeong,‡ Sang-Wook Kim,‡ Woojin Yoon,∥Hoseop Yun,∥O-Pil Kwon,*,‡ and Joon Hak Oh*,† †
Department of Chemical Engineering, Pohang University of Science and Technology
(POSTECH), 77 Cheongam-ro, Pohang, Gyeongbuk 37673, South Korea ‡
Department of Molecular Science and Technology, Ajou University, Suwon 16499, South
Korea ∥
Department of Chemistry & Department of Energy Systems Research, Ajou University,
Suwon 16499, South Korea
Keywords: organic electronics, single crystals, UV detectors, photodetectors, naphthalene diimides
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Abstract This study investigates the performance of single-crystalline nanomaterials of widebandgap naphthalene diimide (NDI) derivatives with methylene-bridged aromatic side chains. Such materials are found to be easily used as high-performance, visible-blind near-UV light detectors. NDI single-crystalline nanoribbons are assembled using a simple solution-based process (without solvent-inclusion problems), which is then applied to organic phototransistors (OPTs). Such OPTs exhibit excellent n-channel transistor characteristics, including an average electron mobility of 1.7 cm2 V-1 s-1, sensitive UV detection properties with a detection limit of ~1 μW cm-2, millisecond-level responses, and detectivity as high as 1015 Jones, demonstrating the highly sensitive organic visible-blind UV detectors. The high performance of our OPTs originates from the large face-to-face - stacking area between the NDI semiconducting cores, which is facilitated by methylene-bridged aromatic side chains. Interestingly, NDI-based nanoribbon-OPTs exhibit distinct visible-blind near-UV detection with an identical detection limit, even under intense visible light illumination (for example, 104 times higher intensity than UV light intensity). Our findings demonstrate that wide-bandgap NDI-based nanomaterials are highly promising for developing high-performance visible-blind UV photodetectors. Such photodetectors could potentially be used for various applications including environmental and health-monitoring systems.
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ACS Applied Materials & Interfaces
1. Introduction The fabrication of short-wavelength optoelectronic devices, such as UV photodetectors and UV light-emitting devices, has attracted much attention due to their various applications.17
To date, a variety of photodetectors based on inorganic silicon (showing high optoelectronic
properties) have been commercialized for UV light detection. However, these devices have many limitations, including the need for expensive and cumbersome filters to prevent the absorption of low-energy photons. This includes the need to block visible and infrared light, as well as their long-term degradation when exposed to UV light with energies much higher than their semiconductor bandgap.8 To overcome these disadvantages, it is essential to develop intrinsic visible-blind UV detectors with a selective response to photonic signals at wavelengths below 400 nm. In addition, the ability to operate under sunlight or ambient illumination (and even under holes in the ozone) will substantially extend UV detectors’ range of practical applications.9-10 Conventional intrinsic UV detectors have been constructed from inorganic semiconductors with wide bandgaps, including diamond, SiC, AlxGa1-xN, ZnO, Ga2O3, GaN, and MgxZn1-xO.8, 10-17
However, the responsivity of these inorganic photodetectors is relatively low (generally
105
14.3a (5.8)b
1.7 (0.44)
365nmc
> 105
-0.7 (4.4)
1.9 (0.62)
Off
> 109
21.0 (2.1)
0.72 (0.13)
365nm
> 107
15.1 (2.2)
0.75 (0.12)
Off
> 104
32.9 (8.8)
0.51 (0.19)
365nm
> 10
4
19.8 (6.4)
0.78 (0.41)
Off
> 108
19.7 (2.3)
0.38 (0.035)
365nm
> 10
7
15.8 (2.2)
μ (cm2 V-1s-1) Rd (A W-1)
Pd
EQEd (%) D*d (Jones)
7230
2.0 × 105 2.5 × 106
1.4 × 1015
1980
2.0 × 105 6.7 × 105
1.8 × 1014
920
9.7 × 102 3.1 × 105
8.3 × 1012
450
5.7 × 104 1.5 × 105
3.1 × 1012
0.44 (0.066)
a
The average values obtained for at least six devices from more than two different batches. The standard deviation values obtained for at least six devices from more than two different batches. c The intensity of the illumination was 100 μW cm-2. d Maximum values under 100 μW cm-2 UV light illumination (365nm). b
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ACS Applied Materials & Interfaces
Graphical Abstract for TOC
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