Letter Cite This: ACS Appl. Mater. Interfaces XXXX, XXX, XXX−XXX
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Ultrafast Nanoscale Phase-Change Memory Enabled By Single-Pulse Conditioning Desmond K. Loke,*,† Jonathan M. Skelton,‡ Tae Hoon Lee,§ Rong Zhao,∥ Tow-Chong Chong,† and Stephen R. Elliott*,§ †
Department of Science and Math, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, United Kingdom § Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom ∥ Department of Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
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‡
S Supporting Information *
ABSTRACT: We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via “initial crystallization” effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 106 cycles for similar “switching-on” voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients
