Downloaded by UNIV OF CALIFORNIA SAN DIEGO on August 26, 2015 | http://pubs.acs.org Publication Date (Web): April 28, 2010 | doi: 10.1021/bk-2010-1039.ch016
Chapter 16
Ultrathin Self-Assembled Organophosphonic Acid Monolayers/Metal Oxides Hybrid Dielectrics for Low-Voltage Field-Effect Transistors Hong Ma,1 Orb Acton,1 Guy Ting,2 Jae Won Ka,1 Hin-Lap Yip,1 and Alex K.-Y. Jen*,1,2 1Department
of Materials Science and Engineering, University of Washington, Seattle, WA 98195 2Department of Chemistry, University of Washington, Seattle, WA 98195 *
[email protected] By using organophosphonic acid self-assembled monolayers (SAMs) on metal oxides (MOs) such as AlOx and HfO2 as ultrathin gate dielectrics and templates, we have realized low-voltage organic field-effect transistors (OFETs) with low leakage currents and small subthreshold slopes. In the demonstrated OFETs, the following device characteristics has been achieved: 1) low leakage current density - down to few nA/cm2; 3) large capacitance density - up to 760 nF/cm2; 2) low operating voltage (
