Crystal Growth and Crystal Structure of EuPtIn4 - American Chemical

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Crystal growth and crystal structure of EuPtIn4 Pallavi Kushwaha, Thamizhavel Arumugam, Arun K. Nigam, and Ramakrishnan [email protected] Srinivasan Cryst. Growth Des., Just Accepted Manuscript • DOI: 10.1021/cg401864p • Publication Date (Web): 18 Apr 2014 Downloaded from http://pubs.acs.org on April 22, 2014

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Crystal Growth & Design

Crystal growth and crystal structure of EuPtIn4 Pallavi Kushwaha,∗,†,‡ Arumugam Thamizhavel,† Arun Kumar Nigam,† and Srinivasan Ramakrishnan† Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India 400 005. E-mail: [email protected];[email protected]

Abstract Single crystal of indium-rich intermetallic compound EuPtIn4 has been grown by high temperature solution growth method, with molten indium as solvent. The crystal structure of the compound was solved from the single crystal x-ray diffraction data and it is found that EuPtIn4 crystallizes in the orthorhombic crystal structure with the space group Cmcm. The estimated lattice constants are a = 4.5300(7) ˚ A, b = 16.904(3) ˚ A and c = 7.3601(12) ˚ A with the unit cell volume V = 563.60(15) ˚ A3 . There are 4 formula units per unit cell (Z = 4), and the R-parameters are R = 0.0390 and wR2 = 0.1033 for 496 unique reflections. A comparison of lattice constants with that of isostructural SrPtIn4 , LaPtIn4 , EuPtIn4 and YbPtIn4 indicate that the radius of the rare-earth ion decides the indium octahedra distortion in the bc−plane. This leads to non-monotonic variation in b and c parameters from the early to the late rare earth element based compounds. EuPtIn4 is a highly conducting material with room temperature resistivity of 25 µΩ · cm. Low temperature resistivity, magnetization and heat capacity measurements show two antiferromagnetic transitions near ∗

To whom correspondence should be addressed Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India 400 005. ‡ Current address: Max-Planck Institute for Chemical Physics of Solids, Dresden, Germany †

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13 K and 5.5 K. From the heat capacity data it was observed that EuPtIn4 has a large Sommerfeld co-efficient (γ) which was estimated to be 725 mJ/K2 ·mol.

Introduction Indium based rare earth transition metal ternary intermetallic compounds have been the subject of constant attention and investigation for their interesting structural and magnetic properties for many years. 1–6 About a decade ago, the interplay of magnetism and superconductivity in the indium rich seminal compounds of cerium namely CeCoIn5 and CeIrIn5 has been studied quite extensively. 7 These two compounds are heavy fermion superconductors with the superconducting transition temperature Tsc = 2.3 and 0.4 K, respectively. Although the Ce compounds show interesting magnetic properties due to the close proximity of the 4f -level to the Fermi energy, the Eu compounds are also equally important due to their interesting magnetic properties. Unlike the other rare-earth atoms, which exist in 3+ state, the non-magnetic (J = 0) trivalent state of Eu is very rarely observed in Eu-based intermetallic compounds as most of the Eu-compounds order magnetically thereby possessing 2+ valence state (J = 7/2), with a large magnetic moment of 7 µB . In some cases an intermediate valence of Eu is also observed. 8 Recently, observation of heavy fermion behavior in EuNi2 P2 has stimulated the search for new Eu based compounds to understand the nature of heavy fermion behavior in these compounds . 9 On other hand other indium rich compounds REN iIn4 have been studied in detail however RET (P d, P t)In4 were not investigated thoroughly except for the crystal structure determination. 10–15 In view of this, here we report the single crystal growth, structural and physical properties of a new compound EuPtIn4 . To the best of our knowledge, single crystal growth of EuPtIn4 has been reported first time here.

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Table 1: Parameters for the single crystal x-ray data collection and refinement for EuPtIn4 Empirical Formula EuPtIn4 Formula weight 806.33 Temperature 293(2) K ˚ Wavelength 0.71073 A Crystal system Orthorhombic space group Cmcm (63) Crystal type Y N iAl4 Unit cell dimensions a = 4.5300(7) ˚ A; α = 90◦ b = 16.904(3) ˚ A; β = 90◦ A; γ = 90◦ c = 7.3601(12) ˚ Volume 563.60(15) ˚ A3 Z, Calculated density 4, 9.503 M g/m3 Absorption coefficient 51.611 mm−1 F(000) 1348 Crystal size 0.05 × 0.05 × 0.03 mm Theta range for data collection 2.41◦ to 29.99◦ Limiting indices −6 ≤ h ≤ 6, −23 ≤ k ≤ 22, −10 ≤ l ≤ 5 Reflections collected / unique 2206/496[R(int) = 0.0466] Completeness to theta = 29.99 100.0% Absorption correction Semi-empirical from equivalents Max. and min. transmission 0.381 and 0.252 Refinement method Full-matrix least-squares on F 2 Data / restraints / parameters 496/11/24 Goodness-of-fit on F 2 1.161 Final R indices [I ≥ 2σ(I)] R1 = 0.0381, wR2 = 0.1024 R indices (all data) R1 = 0.0390, wR2 = 0.1033 Extinction coefficient 0.0057(5)

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Figure 1: (Color online) (a) As grown EuP tIn4 single crystals.(b) schematic representation of crystal planes of an as grown crystal. (c)/(d) and (e)/(f) are observed/generated back reflection Laue pattern for plane (100) and (010) respectively.

Crystal growth Single crystals of EuPtIn4 were grown by self flux method with indium as flux. The high purity metals of Eu (99.9%), Pt (99.99%) and In (99.999%) with a starting nominal composition 1 : 1 : 4 together with the excess In flux, were taken in a recrystallized alumina crucible. We have used the charge to flux ratio as 1 : 4 wt(%). The alumina crucible was then subsequently sealed in a quartz ampoule under a vacuum of 10−6 Torr. The sealed ampoule was placed in a box type resistive heating furnace. The temperature of the furnace was raised to 1050 ◦ C in 30 hours and maintained at this temperature for 24 hours in order to achieve proper homogenization. Then the temperature of the furnace was decreased at the rate of 4 ◦ C/hr down to 550 ◦ C at which point the excess indium was removed by means of centrifuging. Bulk shiny single crystals were obtained by gently tapping the alumina crucible and the crystals were found to be stable in air. Figure 1(a) shows the photograph of the as grown crystal. The crystals were in shape of rectangular plates with dimensions 5 × 2 × 1 mm3 . The simulated morphology of EuPtIn4 is shown in Fig. 1(b). The flat plane of the crystal corresponds to (010) plane as determined by Laue diffraction and is 4


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shown in Fig. 1(c) and (e). Observed patterns for (100) and (010) were matches well with the generated patterns shown in fig (d) and (f) respectively.

X-ray diffraction and structure refinement Single crystal x-ray diffraction analysis was performed on a as grown crystal. A small piece of the crystal ( 0.05 × 0.05 × 0.03 mm3 ) was isolated from a big crystal after a thorough investigation under an optical microscope and used for the single crystal x-ray measurement. X-ray intensity data were collected at 293(2) K on a Bruker Axs Kappa APEX2 diffractometer equipped with graphite monochromated Mo (Kα) radiation (λ = 0.71073 ˚ A). The software programs used for the data collection, cell refinement and data reduction are APEX2 , SAINT-Plus and XPREP respectively 16 . The automatic cell determination routine, with 36 frames at three different orientations of the detector was employed to collect reflections for unit cell determination. The lattice parameters were found to be a = 4.5300(7) ˚ A; b = 16.904(3) ˚ A; and c = 7.3601(12) ˚ A and α = β = γ = 90. Intensity data were collected for one hemisphere (−6 ≤ h ≤ 6, −23 ≤ k ≤ 22, −10 ≤ l ≤ 5). A total of 2206 reflections with 2.41 ≤ θ ≤ 29.99 were recorded and multi-scan absorption correction (SADABS) was applied. After absorption correction, systematic absences of reflection showed the existence of orthorhombic symmetry with Cmcm space group. Four hundred and ninety six unique data were obtained after merging of equivalent reflections. All observed parameters are listed in Table 1. The structure was solved by direct methods (SHELXS-97), and the atoms were refined anisotropically using full-matrix least squares on |F |2 with all unique reflections (SHELXL-97). The atom positions are unambiguously identified. Table 2 shows the fractional coordinates, site occupancies, and thermal parameters of the atoms in the asymmetric unit. The structure is refined with a residual factor of 0.039 and goodness of fit value of 1.161. Observed structure of EuP tIn4 is a representative of the Y N iAl4 type structure which has also been observed for the other ternary indides RET (N i, P d)In4 . 14,17,18

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Table 2: Atomic coordinates and equivalent isotropic displacement parameters for EuPtIn4 . U(eq) is defined as one third of the trace of the orthogonalized Uij Atom Wyckoff posi. x y z U(eq) U11 U22 U33 In(1) 4a 0 0 0.50 14(1) 16(1) 7(1) 20(1) In(2) 4c 0 0.5668(1) 0.75 12(1) 16(1) 3(1) 18(1) In(3) 8f 0 0.8162(1) 0.0484(1) 7(1) 9(1) 6(1) 7(1) Eu(1) 4c 0 0.3742(1) 0.75 9(1) 11(1) 4(1) 12(1) Pt(1) 4c 0 0.7238(1) 0.75 7(1) 9(1) 4(1) 7(1)

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(A2 × 103 ) tensor. U23 U13 −1(1) 0 0 0 0 0 0 0 0 0

Table 3: Interatomic distances in angstrom for EuPtIn4 . Standard deviations are all less than 0.2 pm. In1 2In3 3.1279 4In2 3.1290 4Eu1 3.6104 In2 1Pt1 2.6540 3In1 3.1290 1Eu1 3.2549 4In3 3.3535 2Eu1 3.8126 In3 1Pt1 2.6947 2Pt1 2.7907 1In3 2.9676 1In1 3.1279 2In3 3.2621 2Eu1 3.3042 2In2 3.3535 1Eu1 3.5442 Eu1 4In3 3.3042 2Pt1 3.4055 2In3 3.5441 2In1 3.6104 Pt1 4In3 2.7907 1In3 2.6947 2Eu1 3.4055

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U12 0 0 0 0 0

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Figure 2: (a) Structure of EuPtIn4 constructed using the parameters listed in Table 2. (b) Polyhedra construction around Eu, Pt and In atoms. Polyhedra arrangement view in (c) bc plane and (d) ab plane.

Results and Discussion By using structure parameters listed in Table 2, the crystal structure of EuPtIn4 has been drawn and shown in Figure 2. EuPtIn4 contains 24 atoms per unit cell as shown in Fig. 2(a). Figure 2(b) shows the In atomic arrangement near Eu, Pt and In atom. Numbers of atoms around Eu, Pt and In shown in figure 2 (b, c, d) are kept less for clarity however it is more complicated in real (see table 3 for detail and fig. 2(a)) similar to CeN iIn4 10 . All interatomic distance with corresponding atom are listed in Table 3 for detail. Every Eu atom is surrounded by five In atoms (and two Pt atom) as a result a pyramid of In atoms (complicated polyhedra consist of In and Pt atoms) has formed where Eu atom occupied

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Figure 3: Variation in(a) lattice parameters a and c, (b) unit cell volume (c) In(3)-In(1)In(2) angle (d) rare earth element covalent radius (e) lattice parameter b and (f) tilt angle between two In octahedra in bc-plane for Sr, La, Eu and Yb based samples. Inset of (c) shows the representation of tilt angle and angle between In atoms marked as In1,In2,In3. center position inside the Indium cage. Indium atom itself is octahedrally surrounded by other indium atoms. However, this octahedra is stretched along b-axis as a result angle between In(3)-In(1)-In(2) becomes 64.82(3)◦ . These tilted octahedra are stick together in a zig-zag line along c-axis where the orientation of next octahedra is opposite to the earlier. Detailed arrangement of Eu, Pt and In polyhedra are shown in Fig. 2(c) and (d) for bc and ab plane respectively. It can be clearly seen in Figure 2 (c, d) that In polyhedra arrange their position in such a way that Eu and Pt atom sits inside the lattice and can be described by a stacking sequence of different layers of condensed tessellation of triangles, rectangles and pentagons on a plane. A comparison of unit cell parameters have been shown in Fig. 3 for RE (Sr, La, Eu and Yb)PtIn4 . Structure parameters for RE (Sr, La, and Yb)PtIn4 were taken from reported literature. 19–21 As we move from Sr to Yb i.e with decreasing ionic radius, lattice parameter a (Figure 3(a)) and unit cell volume (Fig. 3(b)) decreases monotonically. However, lattice parameters c (Fig. 3 (a)) and b (Fig. 3 (c) ) show non monotonic variation. Figure 3(c) and Figure 3(d) show variation in angle between In(3)-In(1)-In(2) and rare earth covalent radius

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respectively. Interestingly trend in Figure 3(c) and Figure 3(d) are opposite to each other. As rare earth element sits inside the indium cage, angle/distance between indium atom (In(1)-In(3)-In(2)) get affected due to change in atomic covalent radius of early to late rare earth element (from Sr to Yb). As a result, tilt angle (Fig. 3(f)) in the bc-plane between two indium octahedra changes which is responsible for non monotonic change in the b and c lattice parameters i.e., higher tilt angle for lower lattice parameter. However lattice parameter a does not get affected with tilt angle and therefore it varies monotonically.

Figure 4: (Color online) (a) Left axis: Resistivity measurement as a function of temperature (in log-log scale) in the temperature range 4.2 to 300 K. Right axis: Susceptibility plot (χ vs. log(T ) ) in an applied field of 0.01 T.(b) Heat capacity data as a function of temperature. Inset shows the C/T vs. T 2 plot. To check the crystal quality and other physical properties, transport and magnetic measurements were performed as a function of temperature in the presence of different external magnetic field as shown in Fig. 4. Magnetic field direction was always perpendicular to (010) plane for all in-field measurements. Resistivity measurements were carried out by using standard four-probe technique using a home-made resistivity set up along with cryostat from Oxford Instruments, UK, on as grown rectangular bar shape crystals where the applied current is always perpendicular to (010) plane. For these measurements sample surface was polished by using low grain size polishing paper to ensure that there is no indium on crystal surface. In field measurements were performed by using a commercial cryostat (PPMS, MPMS Quantum Design (USA)) in the temperature range 1.8-300 K under 0.01 Tesla field 9



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to rule out any kind of transition due to the presence of elemental Indium. As it is evident from Fig. 4 (a), the electrical resistivity decreases linearly with decreasing temperature indicates the metallic behavior of EuPtIn4 . At room temperature the resistivity is 25 µΩ cm. Below 13 K, there is a slope change in resistivity signaling the magnetic ordering (TN 1 ) followed by a linear decrease. Further decrease in temperature exhibits a broad transition near 5.5 K (TN2 ) indicating the second magnetic ordering. The resistivity reaches 0.352 µΩ cm at 4.5 K and the residual resistivity ratio (RRR = ρ300 K /ρ4.5

K)

is nearly

71 which gives evidence for the high quality of crystals. The right axis of Fig. 4(a) shows the susceptibility versus temperature graph of EuPtIn4 . For this measurement sample was cooled in zero field to the lowest temperature and a field of 0.01 T was applied and data was collected during warming. With increasing temperature, a linear change in susceptibility is observed up to 5.5 K. For further increase in temperature, the magnetization starts to decrease followed by a peak near 13 K. Above 13 K, a paramagnetic behavior is observed. This high temperature transition looks similar to antiferromagnetic ordering as observed in EuNiIn4 23 near 16 K in magnetization and resistivity measurement. However there is not second transition. Heat capacity measurement shown in figure 4(b) show a sharp peak and broad hump at TN1 and TN2 as observed in the electrical resistivity and magnetization measurements. Inset of figure 4(b) shows the C/T vs. T2 plot. High temperature data is fitted linearly to find of electronic contribution (manifested by the value of Sommerfeld coefficient (γ)) to the heat capacity. Heat capacity data analysis gives the value of γ to be 725 mJ/mol · K2 . Such high value of γ indicates that EuPtIn4 can be a member of heavy fermionic family similar to EuNi2 P2

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however detailed measurements at ultra low

temperature are required to confirm this. Further measurements are in progress and will be published elsewhere.

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Conclusions Single crystals of EuPtIn4 were grown by self flux technique. Single crystal x-ray diffraction measurement was performed to solve the crystal structure. A structural comparison has been made between SrPtIn4 , LaPtIn4 , EuPtIn4 and YbPtIn4 . The structural analysis shows that as we move toward the higher rare-earth side, the lattice constant a and the unit cell volume decrease. However, the lattice parameters b and c show non-monotonic variation. This variation arises due to different covalent radii of rare earth atom which create distortion in In octahedra near In1 atom. However, tilt angle between indium octahedra in bc-plane plays main role in different trend of variation in lattice parameters. Residual resistivity ratio (RRR) value shows high quality of the crystals. Low temperature resistivity, magnetization and heat capacity measurements ensures two antiferromagnetic transitions near 13 K and 5.5 K. Heat capacity data indicates high value of Sommerfeld coefficient (γ). Such high value of γ opens up the possibility Kondo effect, quantum criticality etc. in this Eu based system. We thank Dr. Babu Varghese, from Sophisticated Analytical Instrument Facility, Indian Institute of Technology Madras, Chennai for single crystal X-ray diffraction measurement and Dr. R. Rawat, from UGC-DAE Consortium for scientific Research, Indore for resistivity measurements.

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Graphical TOC Entry EuPtIn4 single crystals have been grown by flux method and the crystal structure is solved by single crystal x-ray diffraction. It was found that Eu is in its 2+ valence state with two magnetic transitions at 13 and 5.5 K. Preliminary heat capacity measurement reveals a large Sommerfeld coefficient γ (= 725 mJ/K2 ·mol), thus signaling that this can be a possible heavy fermion compound.

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