Article pubs.acs.org/JPCC
The Interaction of Cobalt with CeO2(111) Prepared on Cu(111)
Gábor Vári,† László Ó vári,*,‡ Christian Papp,§ Hans-Peter Steinrück,§ János Kiss,‡ and Zoltán Kónya†,‡ †
Department of Applied and Environmental Chemistry, University of Szeged, H-6720 Szeged, Rerrich Béla tér 1, Hungary MTA-SZTE Reaction Kinetics and Surface Chemistry Research Group, H-6720 Szeged, Rerrich Béla tér 1, Hungary § Chair of Physical Chemistry II, University of Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen, Germany ‡
ABSTRACT: The interaction of cobalt with an ultrathin CeO2(111) film on Cu(111) was studied by low energy ion scattering spectroscopy and X-ray photoelectron spectroscopy. At room temperature, Co grows three-dimensionally on the ceria film. For small Co coverages (0.2 ML), oxidation to Co2+ occurs together with the formation of Ce3+ in the ceria. At higher Co coverages (0.7 and 2 ML), an increasing fraction of Co remained metallic after deposition. Annealing to higher temperatures induced diffusion of Co2+ ions into the ceria film, and for metallic Co, presumably agglomeration occurs. At T ≥ 800 K, oxidation of significant amounts of Co0 to Co2+ is found, along with diffusion into the ceria film, and partly also in the copper crystal underneath. On a reduced CeOx surface, the redox reaction between cobalt and cerium was hindered, which, in turn, slowed down cobalt migration into the ceria film.
1. INTRODUCTION Ceria is a key component in a number of catalyst formulations designed for applications in the environment and energy sector. These applications benefit from the outstanding redox properties of ceria, which are, in turn, associated with the surface properties as well as the shape and dimensions of its crystals.1,2 Ceria-supported precious metal catalysts such as Rh, Pd, and Pt are widely used in many important applications, including three-way automobile emission-control catalysis, water gas shift reactions, fuel cells, and also hydrogen production from ethanol; this versatility is due to the peculiar redox properties and oxygen storage capacity of ceria as well as the synergetic effect between metals and the ceria support.1−10 However, the prices of these metals are very high. As an alternative, the less expensive transition metal Co is considered to be a promising catalyst for certain reactions, for example, as a mixed oxide, in CO oxidation11 and also for steam reforming of ethanol (SRE). Indeed, Co promotes the C−C bond rupture in adsorbed ethanol. It achieves high ethanol conversion and selectivities to H2 and CO2 on CeO2, and on other supports, even at relatively low temperatures (∼723 K).12−16 Recent studies suggested that Co2+ sites or partially oxidized Co particles are the active centers in SRE, and pure metallic Co0 patches are responsible for coke formation.17,18 In contrast, other authors considered metallic cobalt to play the key role in SRE.19 In order to obtain a deeper understanding of the relevant surface processes during these complicated catalytic reactions, it is useful to construct simplified, but well controlled, experimental model systems. One established approach is using oxide single crystals or single crystalline oxide films, and preparing nanoclusters of the active metal on top.20−25 The low conductivity of CeO2 single crystals (e.g., compared to that of © 2015 American Chemical Society
TiO2) motivated intense research activities aiming at the preparation of ultrathin single crystalline CeO2 films on various metallic supports, such as Ru(0001),26,27 Cu(111),28−34 and Pd(111).35 The most frequently applied recipe for the preparation of continuous CeO2(111) layers on Cu(111) is the deposition of Ce in an O2 background of ∼5 × 10−7 mbar at 523 K at a rate of 0.08−0.15 ML/min. 1 ML of CeO2(111) layer is defined as one O-Ce-O trilayer of the fluorite structure of bulk CeO2 (3.13 Å, 7.87 × 1014 Ce atoms/cm2).36 This method, which yields well ordered, but not atomically smooth, CeO2(111) films with a (1.5 × 1.5) superstructure on Cu(111),29−32 was applied in the present work. The films are kinetically stabilized, since there is general agreement that the CeO2(111)/Cu(111) system thermodynamically follows the Volmer−Weber (three-dimensional island) growth mode, probably due to the weak interaction between the oxide and the support.31,32,34 In a previous paper, we investigated the effect of oxygen pressure on ceria growth at 523 K.34 Our low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) data indicate that the increase in the oxygen pressure from 5 × 10−7 to 3 × 10−6 mbar leads to a slightly more oxidized ceria layer; at the same time, a significant part of copper atoms were oxidized to Cu1+, possibly incorporated in the CeO2 film. Moreover, the continuity of the film was somewhat worse; i.e., wetting was less pronounced.34 The exploration of the interaction between Co and CeO2(111) is fundamental to understand surface chemical reactions on this supported catalytic system. The growth of Co on CeO2(111) was briefly studied previously using XPS: On Received: January 21, 2015 Revised: April 2, 2015 Published: April 3, 2015 9324
DOI: 10.1021/acs.jpcc.5b00626 J. Phys. Chem. C 2015, 119, 9324−9333
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between the “incident plane” (the plane defined by the ion source axis and the surface normal) and the “detection plane” (the plane defined by the surface normal and the analyzer axis) was 53°. An Al Kα X-ray source was applied for XPS. The binding energy scale was calibrated against the 4f7/2 peak of a thick Au layer (84.0 eV) and the 2p3/2 peak of the clean Cu(111) surface (932.6 eV). XPS was performed with a constant pass energy, and with a detection angle of 16° (off normal). Peak fitting of the Ce 3d XPS region and of the LEIS spectra obtained with helium was executed using Gaussian− Lorentzian line shapes and Shirley baselines.45 Asymmetric peaks were allowed for LEIS. All spectra are presented without smoothing. The Cu(111) single crystal was a product of MaTeck (purity: 99.9999%; orientation accuracy: 0.1°). It was heated radiatively with a W filament from behind. The temperature was measured by a chromel−alumel (K-type) thermocouple inserted into a hole in the crystal. The surface was routinely cleaned applying cycles of Ar+ ion sputtering (10 μA/cm2, 1.5 keV) at 300 K and vacuum annealing (5 min, 1000 K). The purity of O2 (Linde) was 99.995%. Ce (99.9%) and Co (99.99%) were deposited by a commercial 4-pocket PVD source (Oxford Applied Research). The Co coverage was defined to be 1 ML, if the surface concentration of Co atoms was equal to the surface concentration of Co atoms on the Co(0001) surface (1.8 × 1015 atoms/cm2). The Ce and Co fluxes were checked by a quartz crystal microbalance (QCM). CeO2(111) was deposited at a sample temperature of 523 K, evaporating Ce at a rate of 0.07 ML/min in 5 × 10−7 mbar of O2. At the end of preparation, O2 was pumped down at T = 400 K.
the basis of the linear dependence of the Ce 3d/Co 2p area ratio on cobalt coverage, a two-dimensional (2D) growth of Co was proposed up to 1 ML.37 From the Co 2p peak shape, the resulting surface species were identified as Co0 and Co2+. Furthermore, reduction of Ce was observed upon Co deposition, due to the reaction of Co with CeO2.7,37 The ratio of Co2+ to Co0 decreased with increasing Co coverage. The increase of the Ce(3d)/Co(2p) ratio upon annealing was attributed to a partial agglomeration of the Co film to form particles.37 The interaction of other metals with CeO2(111) was also investigated previously. Rh and Pd formed 3D nanoparticles at 300 K, and STM revealed agglomeration upon annealing.38 Similarly, a Volmer−Weber growth mode was identified by STM for gold deposition on CeO2(111) films, with most of the Au particles formed at the step edges and at defect sites on terraces.39 The growth of cobalt was studied also on other oxides. On the basis of the coverage dependence of Zn/Co XPS and AES signal ratios, an approximate layer-by-layer growth mode was assumed on ZnO(0001) at 300 K, although with some 3D character as well. A metallic oxidation state prevailed upon Co deposition. Annealing induced mostly agglomeration up to 700 K, followed by oxidation of Co and spreading on ZnO up to 800 K, and the diffusion of Co into ZnO at 850−900 K.40 Dumont et al. reported island growth applying STM, while annealing led to the diffusion of Co into ZnO.41 A 3D growth mode of Co was identified on alumina prepared on NiAl(110).42 The Co deposits prepared by PVD on nearly stoichiometric TiO2(110) were dominated by the metallic component at 300 K, and no thermal induced redox reaction was identified by XPS between TiO2 and Co upon annealing. However, the strong attenuation of Co 2p features at 900 K was attributed to the diffusion of Co into titania.43 In the present study, we determine the growth mode of cobalt on CeO2(111) by LEIS. This method is particularly suited for that purpose, since it is almost exclusively sensitive to the outermost atomic layer.44 Therefore, in the case of a layerby-layer growth, the complete suppression of substrate signal is expected upon the completion of the first layer, while the changes are much smaller for XPS. Our results point toward a Volmer−Weber growth mode for Co on CeO2(111). Additionally, we also address the thermal evolution of the cobalt− ceria interaction for stoichiometric and reduced CeO2(111) films using XPS and LEIS. While the redox reaction between Co and nearly stoichiometric ceria (at 300 K) presented in this paper is rather similar to that described by Martono et al.,37 herein it is complemented by the study of the same process on reduced ceria and also by the investigation of thermally induced changes in the oxidation states. Regarding morphology, our results indicate the diffusion of cobalt into ceria at higher temperatures.
3. RESULTS AND DISCUSSION 3.1. Cobalt Growth on CeO2(111) at 300 K. The information depth of LEIS with noble gas ions is restricted to the outermost atomic layer due to the dominance of single scattering. Thereby, the impinging noble gas ions are directly scattered off one surface atom toward the analyzer, and almost all noble gas ions participating in multiple collisions are neutralized and consequently cannot be detected.44 Since neutralization is significant also for single scattering events, the intensity of an ion scattering peak depends sensitively on the neutralization probability of the impinging noble gas ions upon the collision with the surface atoms.44 Although matrix effects for the neutralization probability (i.e., changes in the neutralization during scattering from a given atom as a function of its chemical environment), sometimes simply referred to as “neutralization effects”, are relatively rare in LEIS, these can severely hinder a quantitative evaluation of the data, if they arise.44 Previous LEIS studies of metallic and oxidized cerium deposits on other metallic substrates reported serious difficulties related to the neutralization of noble gas ions.35,46 For this reason, we specifically addressed possible neutralization effects related to the growth of Ce and CeO2 on Cu(111) in a preceding paper.34 The conclusions most relevant for the present study are (i) for metallic Ce, no neutralization effects were found with He+, but such effects were detected with Ne+. Interestingly, they only affect the neutralization of Ne+ ions on Ce, but not on Cu; therefore, the Cu(Ne) peak can still be used for quantitative analysis. (ii) No neutralization effects were observed for CeO2 on Cu(111) with He+ and with Ne+. The relative sensitivity factors obtained (separately) for the binary Cu−O and Cu−Ce systems using He+ could be applied also for
2. EXPERIMENTAL SECTION The experiments were carried out in a UHV chamber with a base pressure of 5 × 10−10 mbar. It is equipped with a Leybold hemispherical analyzer for performing LEIS, XPS, and Auger electron spectroscopy measurements, and with a quadrupole mass spectrometer for residual gas analysis. A SPECS IQE 12/ 38 ion source was used for LEIS. He+ or Ne+ ions with 800 eV kinetic energy were applied at a low ion flux of ∼0.03 μA/cm2. The incident and detection angles were 50° with respect to the surface normal, while the scattering angle was 95°. The angle 9325
DOI: 10.1021/acs.jpcc.5b00626 J. Phys. Chem. C 2015, 119, 9324−9333
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The Journal of Physical Chemistry C the ternary Cu−Ce−O system. The CeO2(111) film is assumed to be oxygen-terminated. Nevertheless, since the O ions of the outermost oxygen layer are rather loosely packed,47 with a lattice constant of 3.826 Å, and since the outermost Ce layer is only slightly below the O plane (by 0.78 Å), this Ce layer also contributes to the LEIS spectra. In the present work, we first investigated the deposition of Co on a 16 ML thick CeO2(111) film near room temperature with LEIS (Figure 1). As expected, with increasing Co
Figure 2. LEIS peak areas obtained with helium (a) and neon (b) during stepwise deposition of Co on 16 ML CeO2(111)/Cu(111) at 320 K. The insets show the decrease in the Ce (He) and Ce (Ne) areas at smaller Co coverages. (c) The Co peak area detected with Ne+ as a function of the Co area obtained with He+. (d) The Ce peak area detected with Ne+ as a function of the Ce area obtained with He+. Figure 1. LEIS spectra obtained with He+ (a) and Ne+ (b), after the deposition of increasing amounts of Co on 16 ML CeO2(111)/ Cu(111) at 320 K.
peak. In fact, while both Au and Rh follow 3D island growth on TiO2(110), at small, submonolayer coverages, (quasi) twodimensional clusters form.23,48 In our case, the decrease in the Ce(He) and Ce(Ne) LEIS areas is less steep at higher Co coverages, clearly indicating that the growth occurs in 3D islands. The deposition of 1 ML of Co resulted in a 54% and 64% decrease in the Ce(He) and Ce(Ne) areas, respectively. Nevertheless, at small coverages (up to 0.3 ML), the steep attenuation of Ce LEIS areas might indicate an approximate 2D character. Accordingly, the dependence of the substrate Ce LEIS areas on the admetal Co coverage is very similar to what was observed for other Volmer−Weber systems, like Rh, Au, and Pt on TiO2(110).23,48,49 Nevertheless, a small contribution of mixing of Ce and Co to the observed changes cannot be excluded. We also checked for possible neutralization effects in the Co−CeO2 system. If there are no neutralization matrix effects for a system consisting of elements A and B, then, upon changing the surface composition, the LEIS peak area for A (IA) is a linear function of that for B (IB), if the geometrical shadowing effect of a deposited atom does not change with coverage. This characteristic behavior is widely used to check for the absence of neutralization effects.44,50 Such a linear relationship demonstrated that no neutralization effects occur for the Cu−O system in our previous study.34 For the deposition of metallic Ce on Cu(111), the linearity of the ICu(He) vs ICe(He) curve confirmed the absence of matrix effects with He+, but the ICu(Ne) vs ICe(Ne) curve was nonlinear. As pointed out in ref 34, further information can be gathered from the inspection of the peak areas obtained with neon as a function of the peak areas detected with helium: If in a binary
coverage, a diminution of the Ce peak was observed with both He+ and Ne+. The LEIS spectra obtained with He+ and Ne+ clearly indicate that the deposition of nominally 1 ML of Co (blue spectrum) does not lead to the complete suppression of the Ce peak: it was detected even at ΘCo = 8 ML (orange spectrum in Figure 1b), which unequivocally indicates that Co on ceria does not grow in a layer-by-layer fashion. This conclusion is different from what was suggested by other authors based on XPS results.37 It should be mentioned that LEIS is better suited to the identification of the growth mode than XPS, because of its topmost layer sensitivity. The observed behavior can be explained either by growth in threedimensional (3D) islands (Volmer−Weber type growth) or by a mixing of Co and Ce atoms/ions already at room temperature. The inspection of the LEIS peak areas as a function of Co coverage reveals some further details of Co growth (Figure 2). For Co/Ce intermixing upon cobalt deposition, one would expect that the mixing is more efficient initially, that is, at the Co−CeO2 interface, while it should be less probable at later stages of the growth, when the Co atoms landing on the surface of a cobalt deposit are farther away from the interface. This behavior would lead to a milder attenuation of the Ce LEIS peak at small Co coverages, and a steeper one at larger coverages. However, if 3D island growth occurs, then a steeper decrease in the Ce peak would be expected at small coverages, because very small metal clusters are often two-dimensional. The growth mode can change to three-dimensional at higher coverages, resulting in a slower attenuation of the substrate 9326
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comparison of the Cu(He) and Co(He) LEIS peak areas of the clean Cu(111) surface and of the clean continuous Co film, a relative sensitivity factor for Co with respect to Cu was calculated: SCo = 0.70. Please note that LEIS is much less sensitive for Ce; the relative sensitivity factor referenced to Cu under our experimental circumstances, using He, was 0.042.34 Because of the high sensitivity of LEIS to Co, especially with He, the spectra of Figure 3a were collected with a much smaller ion flux compared to the other measurements in this paper. The room temperature growth of Co on CeO2(111) was investigated also by XPS (Figure 4). The Ce 3d region was monitored to characterize the oxidation state of the ceria film. The Ce 3d spectrum of the clean CeO2(111) surface (“0 ML”) is composed of three doublets (u‴, v‴), (u″, v″), and (u, v), corresponding to the emission from the spin−orbit split 3d3/2 and 3d5/2 core levels (Figure 4a).51−53 The three doublets are assigned to different final states of tetravalent Ce (Ce4+ ions) in Ce compounds: u‴ (916.9 eV) and v‴ (898.6 eV) are due to a Ce 3d94f0 O 2p6 final state, u″ (907.6 eV) and v″ (889.0 eV) to a Ce 3d94f1 O 2p5 final state, and u (901.1 eV) and v (882.7 eV) to a Ce 3d94f2 O 2p4 final state. The observed binding energies are in agreement with previous studies.35,54 For a more detailed picture, which might allow a deeper understanding of the core levels and the properties of Ce in these spectra, we refer to ref 53. Note that, especially, the well separated u‴ peak at 916.9 eV is characteristic of the presence of Ce4+. Peak fitting revealed that the clean CeO2(111) spectrum contained some contribution of reduced Ce3+ ions (Figure 5), which amounted to 5% of the total cerium intensity. The Ce 3d region of Ce2O3 consists of four peaks. They are assigned to two spin−orbit split doublets, (u′, v′) and (u0, v0), resulting from two different final states of Ce3+. According to the literature, u′ (904.1 eV) and v′ (885.6 eV) are assigned to a Ce 3d94f1 O 2p6 final state, and u0 (899.8 eV) and v0 (881.1 eV) to a Ce 3d94f2 O 2p5 final state.52 The deposition of Co at room temperature resulted in a well detectable growth of the reduced component, which is best visible as an intensity enhancement in the valleys at ∼885.6 and ∼904.1 eV (Figure 4a). The fraction of Ce3+ increased up to ΘCo ∼ 0.7 ML, and did not change considerably, when the amount of Co was further raised to 2.0 ML. This conclusion is supported by the peak fitting of the Ce 3d region presented in Figure 5. Note that, for the peak fitting, the binding energies and relative intensities of the Ce3+ and Ce4+ species were kept constant and only the intensities of the resulting two envelopes were allowed to vary. In accordance with previous results, an asymmetry for the u,v doublet for CeO2 was allowed in the fitting.54,55 The observed behavior clearly indicates an electron transfer from Co to ceria, especially at small coverages. In accordance with this observation, a cationic character is expected for Co. In the literature data, for metallic cobalt (Co0), an asymmetric Co 2p3/2 peak is observed at 778.0− 778.5 eV. Co2+ is characterized by a Co 2p3/2 peak at 780−781 eV, with a strong satellite at 786−787 eV. The signature of Co 3+ is a Co 2p 3/2 peak at 780−781 eV with no satellite.7,17,37,56,57 The deposition of 0.2 ML of Co on CeO2(111) led to the appearance of the Co 2p3/2 peak at 781.0 eV and a strong satellite at 786.5 eV, assigned predominantly to Co2+ (Figure 4b). The doublet separation was ∼16.0 eV, which fits very well with previous results on CoO.58,59 Please note that the Co 2p doublet separation, which depends also on the spin state of the compound, can also be used for chemical identification.58−60 For metallic Co and for
system matrix effects are negligible for both helium and neon, then the IA(Ne) vs IA(He) and the IB(Ne) vs IB(He) curves are linear, as it was found for O/Cu(111). Along the same lines, the linearity of the ICu(Ne) vs ICu(He) curve and the nonlinearity of the ICe(Ne) vs ICe(He) curve indicated that the Ce(Ne) peak is affected by matrix effects, while the Cu(Ne) peak is not. Consequently, the latter peak can be used also for quantitative analysis as well. This approach is very useful for ternary systems, where the investigation of the IA(Ne) vs IB(Ne) curve can be meaningless because of the presence of the third element. It was applied to demonstrate the absence of neutralization effects for the Ce(Ne) peak upon CeO 2 deposition on Cu(111).34 For Co deposition on CeO2(111), both the ICo(Ne) vs ICo(He) and the ICe(Ne) vs ICe(He) curves in Figure 2c,d, respectively, are close to linear, suggesting the absence of significant neutralization effects for the Co and Ce peaks for both He+ and Ne+. However, the evaporation of cobalt on the CeO2(111) film induced a significant enhancement of the O(He) peak. Considering that the CeO2(111) film is assumed to be oxygen-terminated, this strong increase is quite unexpected. For its understanding, it was useful to investigate with LEIS the adsorption of O2 at 300 K on a thick, continuous Co film prepared on Cu(111) (Figure 3). Interestingly, with
Figure 3. LEIS spectra obtained with helium (a) and neon (b) after exposition of a 16 ML thick Co film (on Cu(111)) to O2 at 300 K. In (a), the Co region is attenuated by a factor of 5 with respect to the O region.
increasing O2 exposure, the O(He) peak reached a maximum at ∼0.5 L (1 L = 10−6 Torr × 1 s), and steeply decreased thereafter. The Co(He) and Co(Ne) peaks decreased monotonously with increasing O2 exposure (Figure 3). The observed behavior clearly indicates a neutralization effect for the O peak. For this reason, the O LEIS peak was not used in our analysis of the Co/CeO2(111) system. From the 9327
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Figure 4. Ce 3d (a), Co 2p (b), and O 1s (c) regions of XPS spectra of the clean 16 ML CeO2(111)/Cu(111) film and those collected after the deposition of different amounts of Co on top at 300 K.
shown). In Figure 6, LEIS spectra obtained after Co deposition and subsequent stepwise annealing are presented for different Co coverages. In all cases, annealing led to an attenuation of the Co peak, accompanied by an increase of the Ce peak. At ΘCo = 0.2 ML, the thermal treatment at 600 K resulted in a very strong (by 80%) decrease of the Co peaks monitored with both He+ (Figure 6a) and Ne+ (Figure 6d). The almost complete disappearance of the Co peak was observed at 800 K. For the interpretation of these changes, it is useful to compare the LEIS spectra with the XPS data obtained in an analogous experiment (Figure 7). As mentioned above, at ΘCo = 0.2 ML, exclusively Co2+ is formed upon deposition at 300 K, as evidenced by the Co 2p3/2 peak at 781.0 eV and its shake-up satellite at 786.6 eV (Figure 7b). The oxidation of cobalt is accompanied by the slight reduction in the Ce 3d region (Figure 7a). Subsequent annealing at higher temperatures did not change the oxidation state of cobalt. In contrast to LEIS measurements, the Co 2p3/2 peak only slightly decreased (by 10%) due to annealing at 600 K, and also, at 800 K, the Co 2p feature was well detectable, with 40% of the area observed at 300 K (cf. Figures 6a,d and 7b). On the basis of this comparison, desorption of Co from the surface can be excluded as the origin of the disappearance of Co contribution from LEIS spectra at 800 K. Similarly, agglomeration of oxidized Co particles on the surface cannot account for the complete suppression of the Co LEIS peaks. Hence, the observed behavior is assigned primarily to the diffusion of Co2+ ions into the ceria lattice. The slight reduction in the Ce 3d region observed upon Co deposition was reversed during annealing (Figure 7a), which can be rationalized by a redistribution of Ce3+ sites within the film: While reduced cerium ions initially form at the Co−ceria interface, at higher temperatures, an inward diffusion of Ce3+ ions and an outward diffusion of oxygen ions can take place. Note that a previous SIMS study indicated that self-diffusion in ceria is dominated by oxygen diffusion, while cerium cations are essentially immobile up to 900 K.61 One might also argue that the thermal induced disappearance of Co LEIS peaks can be attributed to a further diffusion of oxygen from ceria to cobalt. There are two arguments against this assumption: (i) Although the adsorption of oxygen leads to a strong decrease in the Co peak, as shown in Figure 3, the Co LEIS peaks were easily detected. Moreover, it is not typical that the oxidation of a metal results in the complete disappearance of its LEIS peak.49,62 A clear Co peak was detected also on Co3O4.63 (ii) According to our XPS
Figure 5. (a) Peak fitting for the Ce 3d spectra of the clean 16 ML CeO2(111)/Cu(111) film and those collected after the deposition of different amounts of Co at 300 K. (b) The ratio of the Ce3+ XPS area and the total Ce area calculated from the fitting presented in (a).
Co3+, the peak separation is ∼15 eV. As the amount of cobalt was increased to 0.7 ML, the position of the Co 2p3/2 peak shifted to 779.0 eV, but it was very asymmetric toward higher binding energies and the satellite at 786.5 eV was still detectable. The surface at this point contained a mixture of Co0 and Co2+. The cobalt deposit at ΘCo = 2 ML was largely metallic, but very probably contained also a fraction of Co2+. The broad feature at ∼773 eV is assigned to the L3VV Auger component of cobalt. A similar redox reaction between Co and ceria at room temperature was observed also by Martono et al.37 The Co (He) and Co (Ne) LEIS peak areas obtained after the deposition of 0.2 ML of Co on CeO2(111) are only ∼2% of those obtained on the continuous Co film, strongly indicating that oxygen diffusion from ceria to Co leads to a strong suppression of Co LEIS peaks already during Co deposition, and this process contributes significantly to the oxidation of Co observed by XPS. Nevertheless, Co LEIS peaks are still relatively strong (see the 300 K curves in Figure 6 a,d). 3.2. Thermal Characteristics of the Interaction of Co with CeO2(111)/Cu(111). In the following, thermally induced changes of the Co deposits, investigated by LEIS and XPS, are presented. It is important to note that no dewetting of the CeO2(111) film was observed up to 900 K by LEIS (not 9328
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Figure 6. LEIS spectra obtained with He+ (a−c) and Ne+ (d−f) after the deposition of different amounts of Co on 16 ML CeO2(111) at 300 K, followed by stepwise annealing for 5 min. The Ce peak in (d) is reduced by a factor of 2.
Figure 7. Ce 3d (a), Co 2p (b), and O 1s (c) regions of XPS spectra recorded after the deposition of 0.2 ML of Co on 16 ML CeO2(111)/Cu(111) at 300 K, followed by subsequent annealing to higher temperature for 5 min. For comparison, the spectrum of the clean CeO2(111) film is also displayed (“clean”).
measurements, at a Co coverage of 0.2 ML, almost all Co atoms are oxidized to Co2+ during deposition. Annealing of this surface did not induce any appreciable changes in the Co 2p peak shape, suggesting that the disappearance of the Co LEIS peaks is not due to further oxidation of Co; therefore, we assign it to the diffusion of cobalt in the ceria film. It is worth to mention that this is not an example of Strong Metal Support Interaction (SMSI), because, in SMSI systems, metallic particles are buried by an overlayer of the support oxide.21,49,64
The LEIS annealing experiment for a higher Co coverage of ΘCo = 0.7 ML yielded qualitatively similar results (Figure 6b,e). The main difference was that the attenuation of the Co peaks was less steep: both Co (He) and Co (Ne) intensities were relatively large at 600 K, and the complete suppression of the Co intensities occurred only at 900 K. XPS measurements proved that the deposition of 0.7 ML of Co at 300 K yielded a mixture of Co0 and Co2+ (Figures 4b and 8b). Annealing up to 700 K led to a slight diminution of the overall Co 2p3/2 9329
DOI: 10.1021/acs.jpcc.5b00626 J. Phys. Chem. C 2015, 119, 9324−9333
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Figure 8. Ce 3d (a), Co 2p (b), and O 1s (c) regions of XPS spectra recorded after the deposition of 0.7 ML of Co on 16 ML CeO2(111)/Cu(111) at 300 K, followed by subsequent annealing to higher temperature for 5 min. For comparison, the spectrum of the clean CeO2(111) film is also displayed (“clean”).
Co 2p3/2 peak was observed toward higher binding energies, and is assigned to a more oxidized character. Since, at ΘCo = 0.7 ML, and at 2 ML up to 700 K, the Co 2p peak contained a strong metallic contribution, and the growth mode of Co is of Volmer−Weber type, it is reasonable to assume that agglomeration of cobalt clusters also contributed to the observed attenuation of the Co LEIS intensities. On the other hand, since the diffusion of Co2+ into ceria was clearly proven for ΘCo = 0.2 ML, it is expected that the oxidation of cobalt observed at T ≥ 800 K for higher coverages is also accompanied by inward diffusion. In particular, the complete suppression of the Co LEIS peaks at 900 K can only be explained by this phenomenon (Figure 6). In order to obtain further proof for this process and to reveal additional details, Ne+ ion depth profiling was performed for ΘCo = 2 ML, after annealing the Co surface layer to different temperatures (Figure 9b). The depth profiling of the 2 ML Co/CeO2(111) surface annealed to 900 K showed very small Co intensities in the whole sputtering period. Consequently, almost the whole amount of cobalt diffused through the ceria layer deep into the copper crystal at this temperature and was diluted there. Note that the Cu (Ne) signal appeared at a sputtering time of 90 min (not shown). The depth profiling performed right after Co deposition at 300 K reflected the gradual decrease in the Co intensity and its disappearance at ∼70 min. The behavior observed after a 5 min annealing at 800 K was more complex: Initially, that is, in the first 8 min, an increase in the Co signal was found, indicating that the subsurface region of the ceria film is enriched in Co, which is attributed to the inward diffusion. Nevertheless, the Co (Ne) intensity was smaller in the whole sputtering period than in the “300 K” case, indicating that Co partly had already diffused into the copper crystal. Summarizing the information obtained from the depth profiling, there is a clear tendency for the migration of cobalt into ceria, but at higher temperatures, there is also a diffusion into the copper crystal underneath. Note that, in the previous XPS study of Martono et al., only agglomeration of Co was considered on ceria as an explanation for the increase in the Ce/Co signal ratio upon annealing.37 The influence of ceria stoichiometry on the growth and thermal properties of cobalt was also addressed. A reduced
intensity. The peak became narrower and less asymmetric, due to a somewhat more metallic character, which indicates that Co2+ ions formed at room temperature can easily diffuse into the ceria film. Heating at 800 K resulted in a strong loss of cobalt intensity, and the broadening of the Co 2p feature toward higher binding energies implies a relative increase in the Co2+ component. After annealing at 900 K, the Co 2p doublet was barely detectable. In contrast to the behavior for ΘCo = 0.2 ML, the metallic contribution to the Co 2p peak shape was significant at each temperature (Figure 8b). In the Ce 3d region, a reversal to the Ce4+ peak shape was observed upon annealing, which is primarily assigned to a redistribution of Ce3+ sites within the film. Annealing of a 2 ML Co/CeO2(111) surface gave similar results with both LEIS (Figure 6c,f) and XPS (Figure 9a). The Co 2p region was dominated by the metallic component up to 700 K. At 800 K, a strong intensity loss and a broadening of the
Figure 9. (a) Co 2p region of XPS spectra recorded after the deposition of 2 ML of Co on 16 ML CeO2(111)/Cu(111) at 300 K, followed by subsequent annealing to higher temperatures for 5 min. (b) Ne+ sputter depth profiling performed at 300 K on 2 ML Co/16 ML CeO2(111) surfaces, which were prepared by evaporating 2 ML of Co on 16 ML CeO2(111)/Cu(111) at 300 K, followed by 5 min annealing at the given temperatures. The ion flux was ∼120 nA/cm2. 9330
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Figure 10. Deposition of 0.7 ML of Co on a reduced ceria surface at 300 K, followed by subsequent annealing, monitored by XPS. The reduced ceria surface was prepared by the deposition of 3 ML of metallic Ce on 12 ML CeO2(111)/Cu(111) at 523 K.
Figure 11. Deposition of 0.7 ML of Co on a reduced ceria surface at 300 K, followed by subsequent annealing monitored by LEIS with He+ (a) and Ne+ (b). The reduced ceria surface was prepared by the deposition of 3 ML of metallic Ce on 12 ML CeO2(111)/Cu(111) at 523 K (shown as “clean”). (c) Comparison of the Co (Ne) LEIS areas and the XPS areas of the Co 2p3/2 region (including the L3VV Auger feature) obtained during annealing 0.7 ML of Co deposited on stoichiometric CeO2(111) and on reduced CeOx surface.
In Figure 11c, the temperature dependence of the Co (Ne) LEIS areas and the Co 2p XPS areas (including the L3VV Auger feature) obtained during annealing 0.7 ML of Co deposited on stoichiometric CeO2(111) and on the reduced CeOx surface is presented. After Co deposition at 300 K, the Co LEIS area on the reduced surface was much higher than on the stoichiometric one. The origin of this difference can be twofold: (i) Smaller cobalt clusters may form on the reduced surface. This would be in agreement with previous studies indicating the formation of smaller gold clusters on reduced titanium oxide surfaces due to slower surface diffusion of Au atoms.48,65 (ii) Alternatively, the extraction of oxygen from the ceria lattice by cobalt atoms proceeds to a lesser extent on the reduced surface, and consequently, the formed Co nanoparticles are less covered by oxygen. At higher temperatures, the difference observed between Co LEIS areas on the two surfaces gets smaller, although the Co peak was always higher on reduced ceria. On the other hand, the difference in the Co XPS signal becomes stronger upon annealing (Figure 11c), indicating a less pronounced inward diffusion (a smaller average distance of Co atoms from the outermost surface) on reduced ceria after annealing. Since the Co 2p peak shape was largely metallic at 900 K, while the
CeOx surface was prepared by evaporating 3 ML of metallic Ce at 523 K onto 12 ML CeO2(111) prepared on Cu(111). The Ce 3d region of this surface was dominated by the Ce3+ component, but Ce4+ was also present. When 0.7 ML of Co was deposited on this surface at 300 K, the Co 2p3/2 peak was narrower and somewhat less asymmetric than on CeO2(111) (Figure 10b). This line shape was assigned to a more metallic character, implying that the redox reaction between cobalt and ceria proceeds to a smaller extent on the reduced surface. The Co 2p region was dominated by the metallic peak shape in the whole temperature range (Figure 10b), in contrast to what was observed on CeO2(111) (Figure 8b). Moreover, the thermally induced attenuation of the Co 2p intensity was milder on the reduced ceria surface, suggesting that the inward diffusion of Co is more hindered. The latter statement was confirmed also by LEIS measurements (Figure 11a,b), which showed a less steep decrease in the Co peak on the reduced surface as a function of temperature. In the Ce 3d region, a slight reoxidation was observed, which is assigned to a homogenization of reduced Ce3+ ions within the film, which are initially preferentially located near the surface. A similar spectral change was observed in the Ce 3d region, also, during annealing, of the reduced ceria layer without Co (not shown). 9331
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almost complete disappearance of the Co LEIS peaks indicated the inward diffusion of Co, it is possible that an SMSI process (encapsulation) takes place on the reduced ceria.
4. SUMMARY AND CONCLUSIONS We have investigated the interaction of cobalt with a continuous ultrathin CeO2(111) film by means of LEIS and XPS. The ceria layer was prepared on a Cu(111) single crystal using an established procedure by evaporation of Ce in an O2 background. Co was deposited on this CeO2(111) film at room temperature by physical vapor deposition. From the LEIS measurements, a three-dimensional growth mode of Co was identified. It was verified that no disturbing neutralization effects occur for the Co peaks in LEIS; however, strong matrix effects are found for the O peak, which, therefore, was not used for quantitative analysis. At small coverages (ΘCo = 0.2 ML), the whole amount of cobalt was oxidized to Co 2+ ; consequently, part of the ceria was reduced from Ce4+ to Ce3+, as indicated by XPS. At higher coverages (ΘCo = 0.7 and 2 ML), the XP spectra showed that an increasing fraction of Co remained in the metallic state, Co0, after deposition. At higher temperatures, diffusion of Co2+ ions into the ceria film was found, and for Co0, presumably also agglomeration takes place. At T ≥ 800 K, extensive oxidation of the remaining Co atoms to Co2+ sets in, accompanied by diffusion into the ceria film. In this temperature range, also migration of a part of cobalt into the copper crystal occurs. Upon Co deposition on a reduced CeOx surface, the redox reaction between cobalt and cerium was found to be much slower, which also led to a lower degree of cobalt migration into the cerium oxide film.
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AUTHOR INFORMATION
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*E-mail:
[email protected]. Tel.: +36-62-343586. Fax: +36-62-544106. URL: http://www2.sci.u-szeged.hu/radio_ rekin/indexrekin.htm (L.O.). Notes
The authors declare no competing financial interest.
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ACKNOWLEDGMENTS This work was supported by the Alexander von Humboldt Foundation within the Research Group Linkage Program, by COST Action CM1104, and by the Cluster of Excellence ‘‘Engineering of Advanced Materials’’.
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REFERENCES
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