Downloaded by KAOHSIUNG MEDICAL UNIV on June 8, 2018 | https://pubs.acs.org Publication Date: May 5, 1989 | doi: 10.1021/ba-1989-0221.ix001
AUTHOR INDEX Anderson, Timothy J., 105 Balazs, Marjorie K., 505 Baron, Bill N . , 171 Brown, Robert A., 35 Fair, Richard B., 265 Graves, David B., 377 Hess, Dennis W., 1, 377
Jackson, Scott C , 171 Jensen, Klavs F., 1, 199 Jensen, Ronald J . , 441 O'Brien, Michael J . , 325 Rocheleau, Richard E . , 171 Russell, T. W. Fraser, 171 Soane, David S., 325
AFFILIATION INDEX Balazs Analytical Laboratory, 505 Duke University, 265 General Electric Company, 325 Honeywell, 441 Massachusetts Institute of Technology, 35 Microelectronics Center of North Carolina, 265
University of California—Berkeley, 1, 325, 377 University of Delaware, 171 University of Florida, 105 University of Minnesota, 1, 199
SUBJECT INDEX A A - A B simple eutectic phase diagram, 124, 125/ Acceptors, 274 Activity coefficient ratio (Γ„) determination of experimental value, 157 values for Al-Ga-Sb, 157, 158/ values for Ga-In-Sb, 157, 159/ Adatoms, 190 Additive approach for processing thin-film multilayer structures, 483/ Additive processes ion implantation, 361 metal layer deposition, 361 resist requirement, 361 vapor dopant diffusion, 361 Additives for F scavenging, 415 Advanced very-large-scale integrated-circuit package, 490, 492 Aluminum effects of copper additions to aluminum films, 418-419 etching, 418
Aluminum—Continued film corrosion after etching, 419 preferred etchants, 418 prevention of corrosion, 419 use in integrated circuits, 418 Amorphous carbon, 431 Amorphous silica, 313 Amorphous silicon applications, 426 bonding configurations of hydrogen, 426427 composition, 425 correlation between structure and film properties, 427 distribution of Si-Η bonds, 427 production from S i H , 426 reactions during deposition by P E C V D , 427 Analysis of the surface reaction zone group II-VI compound semiconductors, 195, 196/ group III-V compound semiconductors, 195 ternary group I—III—VI chalcopyrite, 195 4
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Hess and Jensen; Microelectronics Processing Advances in Chemistry; American Chemical Society: Washington, DC, 1989.
