Surface Passivation of Nanoporous TiO2 via Atomic Layer Deposition

Sep 17, 2009 - Ahmad W. Amer , Mostafa A. El-Sayed , and Nageh K. Allam .... Nicolas Tétreault , Éric Arsenault , Leo-Philipp Heiniger , Navid Sohei...
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J. Phys. Chem. C 2009, 113, 18385–18390

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Surface Passivation of Nanoporous TiO2 via Atomic Layer Deposition of ZrO2 for Solid-State Dye-Sensitized Solar Cell Applications Tina C. Li,† Ma´rcio S. Go´es,‡,§ Francisco Fabregat-Santiago,*,‡ Juan Bisquert,‡ Paulo R. Bueno,§ Chaiya Prasittichai,† Joseph T. Hupp,*,† and Tobin J. Marks† Department of Chemistry and the Argonne-Northwestern Solar Energy Research Center, Northwestern UniVersity, EVanston, Illinois 60208-3113, PhotoVoltaic and Optoelectronic DeVices Group, Departament de Fı´sica, UniVersitat Jaume I, 12071 Castello´, Spain, and Departamento de Fı´sico-Quı´mica, Instituto de Quı´mica de Araraquara, UniVersidade Estadual Paulista, R. Prof. Francisco Degni s/n, 14800-900 Araraquara SP, Brazil ReceiVed: July 12, 2009; ReVised Manuscript ReceiVed: August 22, 2009

We report here the utilization of atomic layer deposition to passivate surface trap states in mesoporous TiO2 nanoparticles for solid-state dye-sensitized solar cells based on 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene (spiro-OMeTAD). By depositing ZrO2 films with angstrom-level precision, coating the mesoporous TiO2 produces over a two-fold enhancement in short-circuit current density, as compared to a control device. Impedance spectroscopy measurements provide evidence that the ZrO2 coating reduces recombination losses at the TiO2/spiro-OMeTAD interface and passivates localized surface states. Lowfrequency negative capacitances, frequently observed in nanocomposite solar cells, have been associated with the surface-state mediated charge transfer from TiO2 to the spiro-OMeTAD. Introduction Dye-sensitized solar cells (DSCs) based on mesoporous titania and liquid electrolytes have been presented as a promising renewable energy source, achieving power conversion efficiencies greater than 11%.1 However, leakage of the commonly used I-/I3- redox electrolyte, with consequent compromise of longterm cell stability, has prompted efforts to find an efficient hole conductor for all solid-state DSCs (Figure 1). While the performance of solid-state DSCs (ssDSCs) is usually much lower than that with liquid electrolytes, the efficiencies of devices based on the molecular organic semiconductor spiroOMeTAD have recently advanced.2 Nevertheless, device performance is still constrained by competing transport and recombination dynamics, and electron diffusion lengths are limited to a few micrometers.3 Like their liquid counterparts, ssDSCs generally rely on a network of sintered nanocrystalline TiO2 particles, sensitized with a monolayer of a ruthenium-containing dye.4-6 Upon illumination, the sensitizer is excited by absorption of a photon and injects an electron into the conduction band of the semiconductor. Electron transport through the titanium oxide framework can be described by a trapping/detrapping model, where an electron moves from trap-to-trap until collection at the cell’s transparent conducting oxide anode. The hole conductor transports the hole remaining in the oxidized dye to the cathode via a hopping mechanism.7 The collection efficiency of injected electrons in DSCs is less than unity on account of charge recombination processes. For ssDSCs, the principle charge losses come from “interception”, i.e., deleterious recombination of the electrons in the TiO2 and the holes in the spiro-OMeTAD, due to the close contact * To whom correspondence should be addressed. E-mail: fabresan@ fca.uji.es and [email protected]. † Northwestern University. ‡ Universitat Jaume I. § Universidade Estadual Paulista.

Figure 1. MM2 energy minimization of the solid-state hole conductor, spiro-OMeTAD, used to replace I-/I3- (hydrogens omitted for clarity; carbons are gray, nitrogens are blue, and oxygens are red).

between the two phases.5,8 In comparison to liquid-junction DSCs, this effect is even more acute by lower charge screening, due to the lower ion mobility in the solid-state phase. Strategies to reduce interfacial interception have involved decreasing the TiO2 electrode thickness below 3 µm, adding ionic salts to the spiro-OMeTAD solution,9 replacing the traditional “N719” ruthenium polypyridyl sensitizer with the hydrophobic analogue “Z907”,10 and inserting insulating layers between the TiO2 and hole transport medium to prevent back reaction of the electrons.11 Previously, dip-coating methods were employed to coat tunneling layers onto the nanoporous TiO2 electrode12-14 (i.e., Al2O3, MgO, SiO2); however, control of the film growth through this technique is problematic, and comparatively thick films are required to ensure complete coverage. Here, we address the importance of the inorganic/organic

10.1021/jp906573w CCC: $40.75  2009 American Chemical Society Published on Web 09/17/2009

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interface in the solid-state DSC system, where recombination plays a major role. By using atomic layer deposition (ALD),15-17 we initiate slow and conformal growth of ZrO2 onto the TiO2 nanoparticles to passivate surface trap states, leading to significant enhancements in short-circuit current densities and overall power conversion efficiencies. Impedance spectroscopy (IS) is a powerful technique to investigate the kinetic processes in DSCs.18-21 Under the appropriate conditions, several processes can be readily distinguished according to the spectral shapes of the impedance response as a function of frequency, and recently, the major features of IS in spiro-OMeTAD based DSCs were explicated.22 Such methods are applied in this paper to identify the effects on ssDSC performance of depositing ZrO2 coatings of varying thickness on the TiO2 nanoparticles with attention focused on the various interception processes. Importantly, for progressively thicker ZrO2 coating levels, we find a reduction of the inductive behavior at low frequencies; inductive behavior is known to be a performance-limiting factor in other types of solar cells23 as well as in some organic light-emitting diodes.24 For the first time, the experimental evidence clearly indicates that the spatial origin of the inductive component of nanostructured solar cell impedance is at the metal oxide/hole conductor interface. Experimental Methods All solvents were purchased from Sigma-Aldrich as anhydrous grade or higher. Acetonitrile was further purified according to published methods.25 Chlorobenzene was dried over phosphorus pentoxide and distilled under dry nitrogen. The hole conductor spiro-OMeTAD was synthesized and purified as published26 and solid-state devices using spiro-OMeTAD were prepared as previously described.27 Patterned fluorine-doped tin oxide (FTO) electrodes on glass (Hartford Glass, TEC 15) were used with a dense, compact blocking layer of TiO2 (the back layer), deposited via spray pyrolysis,28 yielding 120 nm thick anatase films. TiO2 paste (Dyesol, DSL-90-T) diluted with terpineol was screen-printed directly onto this underlayer, and sintered at 500 °C for 30 min. The resulting 1.8 µm mesoporous films were treated with UV-ozone for 10 min and immediately transferred to the ALD chamber (Savannah 100 ALD instrument, Cambridge Nanotech, Inc.) for ZrO2 growth at 200 °C. Alternating pulses of the precursors Zr(NMe2)4 and H2O were used, with reaction exposure times of 1 and 5 s, respectively, achieving a growth rate of 1.1 Å/cycle, as determined by ellipsometry on flat platforms. Prior to dye loading, the electrodes were again treated with UV-ozone and immersed in a 0.3 mM solution of cis-bis(isothiocyanato)bis(2,2′-bipyridyl4,4′-dicarboxylato)ruthenium(II) bis(tetrabutylammonium) (Dyesol, N719) in CH3CN:tert-butyl alcohol (50:50 vol %) for 10 h. A 0.17 M solution of spiro-OMeTAD was prepared in chlorobenzene, adding 0.3 mM [N(p-C6H4Br)3](SbCl6), 20.4 mM Li[(CF3SO3)2N], and 0.13 M tert-butylpyridine dissolved in acetonitrile. These additives serve to control the doping level of the spiro-OMeTAD and also to enhance conductivity as well as overall cell performance.29 The hole conductor solution was drop-cast onto the dye-sensitized TiO2 films and allowed to infiltrate the pores before spin-casting at 1800 and 260 rpm/s acceleration for 40 s. Excess solution was carefully wiped with toluene and the films were dried overnight in a vacuum oven at 55 °C. A 50 nm gold electrode was then thermally evaporated under high vacuum (10-6 Torr) at