5136
J . Am. Chem. SOC.1990,I 1 2, 5 136-5 142
to efforts to characterize the photoelectrochemical effect of Ru3+ on GaAs by investigating changes in the interface trap density of GaAs that has been exposed to Ruo in ultra-high-vac~um,4~ and to the general usefulness of the Ru3+ ion as a surface passivant when in contact with air,& aqueous I-/I
