Quantification of Thin Film Crystallographic Orientation Using X-ray

Apr 2, 2010 - In this work, we introduce an X-ray diffraction based method for collecting and constructing quantitative pole figures with an area dete...
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Quantification of Thin Film Crystallographic Orientation Using X-ray Diffraction with an Area Detector )

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Jessy L. Baker,† Leslie H. Jimison, Stefan Mannsfeld,^ Steven Volkman,§ Shong Yin,§ Vivek Subramanian,§ Alberto Salleo, A. Paul Alivisatos,‡ and Michael F. Toney*,^ Department of Mechanical Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, and ^ Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 )



Received December 22, 2009. Revised Manuscript Received February 26, 2010 As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological and crystallographic information is needed to predict and optimize the film’s electrical, optical, and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector in two sample geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

1. Introduction The optical and electrical properties of polycrystalline and semicrystalline materials are highly dependent on the materials’ morphology. When these properties are anisotropic in the single crystal form, the corresponding bulk properties of the poly- or semicrystalline material are often dependent upon the orientation distribution of the crystallites.1 As efforts are made to optimize the electrical and optical properties of functional, solution-processed polycrystalline films used for thin film transistors, solar cells, and other emerging technologies, it is necessary to fully characterize the orientation distribution, or texture, of the crystallites. There has been much effort devoted to correlating the microstructure and properties of thin films ( χ > 60, while the relevant angular range for grazing data is θB