Nanoscience and Nanotechnology Research at Peking University

Nanoscience and Nanotechnology Research at Peking University. Yan Li (Associate Editor). Xing Zhu (Professor). Peking University. Paul Weiss (Editor-i...
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Nanoscience and Nanotechnology Research at Peking University

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eking University is one of the most esteemed universities in China and is among the top research universities in the world. On May 4, 2018, Peking University will celebrate its 120 year anniversary. The university is proud of its rapid development in scientific research in recent years, which is well represented by the university’s advancements in nano research. In order to celebrate the 120 year anniversary of Peking University, we organized a virtual issue of select papers published in ACS Nano from Peking University,1 which will be the first in a series of institutional and regional virtual issues (stay tuned!).

In order to celebrate the 120 year anniversary of Peking University, we organized a virtual issue of select papers published in ACS Nano from Peking University, which will be the first in a series of institutional and regional virtual issues.

Figure 1. Graphene glass acting as a transparent conducting electrode. Reprinted from ref 3. Copyright 2016 American Chemical Society.

reported their different conception of the dispersion mechanism of single-walled CNTs (SWCNTs) in ionic liquids,4 which has now been widely accepted. Recently, this group realized the growth of high-purity (14,4) nanotubes via the template effect of the catalysts and the etching effect of moisture on metallic tubes.5 The preparation of semiconducting SWCNTs with a single chirality is of great importance for applications of SWCNTs in CNT-based electronics. The CNT device group led by Editorial Advisory Board member Prof. Lian-Mao Peng has published 19 papers in ACS Nano since 2009. The first paper that Peng and colleagues published in ACS Nano described symmetric CNT-based integrated circuits, which were fabricated using fewer steps (17 for CNT vs 32 for Si) but demonstrated extremely high carrier mobility for both electrons and holes.6 The mobility for both carriers was over 3000 cm2/Vs, whereas the hole mobility of Sibased nanoscale devices is typically